Visible spectrum (645 nm) transverse electric field laser operation of InP quantum dots coupled to tensile strained In0.46Ga0.54P quantum wells
Identifieur interne : 00A809 ( Main/Repository ); précédent : 00A808; suivant : 00A810Visible spectrum (645 nm) transverse electric field laser operation of InP quantum dots coupled to tensile strained In0.46Ga0.54P quantum wells
Auteurs : RBID : Pascal:04-0055890Descripteurs français
- Pascal (Inist)
English descriptors
- KwdEn :
Abstract
Data are presented that demonstrate the continuous wave room-temperature transverse-electric field (TE) visible-spectrum (645 nm) heterostructure laser operation of single-layer compressively strained 3.75 monolayer equivalent InP quantum dots (QDs) coupled to 60 Å wide tensile-strained In0.46Ga0.54P quantum wells (QWs). The simple stripe geometry (200 μm×4 μm) InP QD+InGaP QW heterostructure laser is capable of high performance despite the coupling of two competing recombination systems. The InP QD+InGaP QW laser exhibits low threshold (∼31 mA), high quantum efficiency (72%, ∼1.38 mW/mA), a relatively high characteristic temperature T0 of 69 K, and a shift in wavelength at temperature of 0.19 nm/°C. © 2004 American Institute of Physics.
Links toward previous steps (curation, corpus...)
- to stream Main, to step Corpus: 00C070
Links to Exploration step
Pascal:04-0055890Le document en format XML
<record><TEI><teiHeader><fileDesc><titleStmt><title xml:lang="en" level="a">Visible spectrum (645 nm) transverse electric field laser operation of InP quantum dots coupled to tensile strained In<sub>0.46</sub>Ga<sub>0.54</sub>P quantum wells</title><author><name sortKey="Walter, G" uniqKey="Walter G">G. Walter</name><affiliation wicri:level="2"><inist:fA14 i1="01"><s1>Electrical Engineering Research Laboratory and Center for Compound Semiconductor Microelectronics, University of Illinois at Urbana-Champaign, Urbana, Illinois 61801</s1><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ></inist:fA14><country xml:lang="fr">États-Unis</country><placeName><region type="state">Illinois</region></placeName><wicri:cityArea>Electrical Engineering Research Laboratory and Center for Compound Semiconductor Microelectronics, University of Illinois at Urbana-Champaign, Urbana</wicri:cityArea></affiliation></author><author><name sortKey="Elkow, J" uniqKey="Elkow J">J. Elkow</name><affiliation wicri:level="2"><inist:fA14 i1="01"><s1>Electrical Engineering Research Laboratory and Center for Compound Semiconductor Microelectronics, University of Illinois at Urbana-Champaign, Urbana, Illinois 61801</s1><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ></inist:fA14><country xml:lang="fr">États-Unis</country><placeName><region type="state">Illinois</region></placeName><wicri:cityArea>Electrical Engineering Research Laboratory and Center for Compound Semiconductor Microelectronics, University of Illinois at Urbana-Champaign, Urbana</wicri:cityArea></affiliation></author><author><name sortKey="Holonyak, N" uniqKey="Holonyak N">N. Holonyak</name><affiliation wicri:level="2"><inist:fA14 i1="01"><s1>Electrical Engineering Research Laboratory and Center for Compound Semiconductor Microelectronics, University of Illinois at Urbana-Champaign, Urbana, Illinois 61801</s1><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ></inist:fA14><country xml:lang="fr">États-Unis</country><placeName><region type="state">Illinois</region></placeName><wicri:cityArea>Electrical Engineering Research Laboratory and Center for Compound Semiconductor Microelectronics, University of Illinois at Urbana-Champaign, Urbana</wicri:cityArea></affiliation></author><author><name sortKey="Heller, R D" uniqKey="Heller R">R. D. Heller</name><affiliation wicri:level="4"><inist:fA14 i1="02"><s1>Microelectronics Research Center, The University of Texas at Austin, Austin, Texas 78712-1100</s1><sZ>4 aut.</sZ><sZ>5 aut.</sZ><sZ>6 aut.</sZ></inist:fA14><country xml:lang="fr">États-Unis</country><placeName><region type="state">Texas</region></placeName><wicri:cityArea>Microelectronics Research Center, The University of Texas at Austin, Austin</wicri:cityArea><orgName type="university">Université du Texas à Austin</orgName></affiliation></author><author><name sortKey="Zhang, X B" uniqKey="Zhang X">X. B. Zhang</name><affiliation wicri:level="4"><inist:fA14 i1="02"><s1>Microelectronics Research Center, The University of Texas at Austin, Austin, Texas 78712-1100</s1><sZ>4 aut.</sZ><sZ>5 aut.</sZ><sZ>6 aut.</sZ></inist:fA14><country xml:lang="fr">États-Unis</country><placeName><region type="state">Texas</region></placeName><wicri:cityArea>Microelectronics Research Center, The University of Texas at Austin, Austin</wicri:cityArea><orgName type="university">Université du Texas à Austin</orgName></affiliation></author><author><name sortKey="Dupuis, R D" uniqKey="Dupuis R">R. D. Dupuis</name><affiliation wicri:level="4"><inist:fA14 i1="02"><s1>Microelectronics Research Center, The University of Texas at Austin, Austin, Texas 78712-1100</s1><sZ>4 aut.</sZ><sZ>5 aut.</sZ><sZ>6 aut.</sZ></inist:fA14><country xml:lang="fr">États-Unis</country><placeName><region type="state">Texas</region></placeName><wicri:cityArea>Microelectronics Research Center, The University of Texas at Austin, Austin</wicri:cityArea><orgName type="university">Université du Texas à Austin</orgName></affiliation></author></titleStmt><publicationStmt><idno type="inist">04-0055890</idno><date when="2004-02-02">2004-02-02</date><idno type="stanalyst">PASCAL 04-0055890 AIP</idno><idno type="RBID">Pascal:04-0055890</idno><idno type="wicri:Area/Main/Corpus">00C070</idno><idno type="wicri:Area/Main/Repository">00A809</idno></publicationStmt><seriesStmt><idno type="ISSN">0003-6951</idno><title level="j" type="abbreviated">Appl. phys. lett.</title><title level="j" type="main">Applied physics letters</title></seriesStmt></fileDesc><profileDesc><textClass><keywords scheme="KwdEn" xml:lang="en"><term>Compression strength</term><term>Experimental study</term><term>Gallium compounds</term><term>III-V semiconductors</term><term>Indium compounds</term><term>Monolayers</term><term>Quantum well lasers</term><term>Tensile strength</term><term>quantum dot lasers</term></keywords><keywords scheme="Pascal" xml:lang="fr"><term>4255P</term><term>Etude expérimentale</term><term>Indium composé</term><term>Gallium composé</term><term>Semiconducteur III-V</term><term>Résistance traction</term><term>Résistance compression</term><term>Couche monomoléculaire</term><term>Laser puits quantique</term></keywords></textClass></profileDesc></teiHeader><front><div type="abstract" xml:lang="en">Data are presented that demonstrate the continuous wave room-temperature transverse-electric field (TE) visible-spectrum (645 nm) heterostructure laser operation of single-layer compressively strained 3.75 monolayer equivalent InP quantum dots (QDs) coupled to 60 Å wide tensile-strained In<sub>0.46</sub>Ga<sub>0.54</sub>P quantum wells (QWs). The simple stripe geometry (200 μm×4 μm) InP QD+InGaP QW heterostructure laser is capable of high performance despite the coupling of two competing recombination systems. The InP QD+InGaP QW laser exhibits low threshold (∼31 mA), high quantum efficiency (72%, ∼1.38 mW/mA), a relatively high characteristic temperature T<sub>0</sub> of 69 K, and a shift in wavelength at temperature of 0.19 nm/°C. © 2004 American Institute of Physics.</div></front></TEI><inist><standard h6="B"><pA><fA01 i1="01" i2="1"><s0>0003-6951</s0></fA01><fA02 i1="01"><s0>APPLAB</s0></fA02><fA03 i2="1"><s0>Appl. phys. lett.</s0></fA03><fA05><s2>84</s2></fA05><fA06><s2>5</s2></fA06><fA08 i1="01" i2="1" l="ENG"><s1>Visible spectrum (645 nm) transverse electric field laser operation of InP quantum dots coupled to tensile strained In<sub>0.46</sub>Ga<sub>0.54</sub>P quantum wells</s1></fA08><fA11 i1="01" i2="1"><s1>WALTER (G.)</s1></fA11><fA11 i1="02" i2="1"><s1>ELKOW (J.)</s1></fA11><fA11 i1="03" i2="1"><s1>HOLONYAK (N.)</s1></fA11><fA11 i1="04" i2="1"><s1>HELLER (R. D.)</s1></fA11><fA11 i1="05" i2="1"><s1>ZHANG (X. B.)</s1></fA11><fA11 i1="06" i2="1"><s1>DUPUIS (R. D.)</s1></fA11><fA14 i1="01"><s1>Electrical Engineering Research Laboratory and Center for Compound Semiconductor Microelectronics, University of Illinois at Urbana-Champaign, Urbana, Illinois 61801</s1><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ></fA14><fA14 i1="02"><s1>Microelectronics Research Center, The University of Texas at Austin, Austin, Texas 78712-1100</s1><sZ>4 aut.</sZ><sZ>5 aut.</sZ><sZ>6 aut.</sZ></fA14><fA20><s1>666-668</s1></fA20><fA21><s1>2004-02-02</s1></fA21><fA23 i1="01"><s0>ENG</s0></fA23><fA43 i1="01"><s1>INIST</s1><s2>10020</s2></fA43><fA44><s0>8100</s0><s1>© 2004 American Institute of Physics. All rights reserved.</s1></fA44><fA47 i1="01" i2="1"><s0>04-0055890</s0></fA47><fA60><s1>P</s1></fA60><fA61><s0>A</s0></fA61><fA64 i1="01" i2="1"><s0>Applied physics letters</s0></fA64><fA66 i1="01"><s0>USA</s0></fA66><fC01 i1="01" l="ENG"><s0>Data are presented that demonstrate the continuous wave room-temperature transverse-electric field (TE) visible-spectrum (645 nm) heterostructure laser operation of single-layer compressively strained 3.75 monolayer equivalent InP quantum dots (QDs) coupled to 60 Å wide tensile-strained In<sub>0.46</sub>Ga<sub>0.54</sub>P quantum wells (QWs). The simple stripe geometry (200 μm×4 μm) InP QD+InGaP QW heterostructure laser is capable of high performance despite the coupling of two competing recombination systems. The InP QD+InGaP QW laser exhibits low threshold (∼31 mA), high quantum efficiency (72%, ∼1.38 mW/mA), a relatively high characteristic temperature T<sub>0</sub> of 69 K, and a shift in wavelength at temperature of 0.19 nm/°C. © 2004 American Institute of Physics.</s0></fC01><fC02 i1="01" i2="3"><s0>001B40B55P</s0></fC02><fC03 i1="01" i2="3" l="FRE"><s0>4255P</s0><s2>PAC</s2><s4>INC</s4></fC03><fC03 i1="02" i2="3" l="FRE"><s0>Etude expérimentale</s0></fC03><fC03 i1="02" i2="3" l="ENG"><s0>Experimental study</s0></fC03><fC03 i1="03" i2="3" l="FRE"><s0>Indium composé</s0></fC03><fC03 i1="03" i2="3" l="ENG"><s0>Indium compounds</s0></fC03><fC03 i1="04" i2="3" l="ENG"><s0>quantum dot lasers</s0><s4>INC</s4></fC03><fC03 i1="05" i2="3" l="FRE"><s0>Gallium composé</s0></fC03><fC03 i1="05" i2="3" l="ENG"><s0>Gallium compounds</s0></fC03><fC03 i1="06" i2="3" l="FRE"><s0>Semiconducteur III-V</s0></fC03><fC03 i1="06" i2="3" l="ENG"><s0>III-V semiconductors</s0></fC03><fC03 i1="07" i2="3" l="FRE"><s0>Résistance traction</s0></fC03><fC03 i1="07" i2="3" l="ENG"><s0>Tensile strength</s0></fC03><fC03 i1="08" i2="3" l="FRE"><s0>Résistance compression</s0></fC03><fC03 i1="08" i2="3" l="ENG"><s0>Compression strength</s0></fC03><fC03 i1="09" i2="3" l="FRE"><s0>Couche monomoléculaire</s0></fC03><fC03 i1="09" i2="3" l="ENG"><s0>Monolayers</s0></fC03><fC03 i1="10" i2="3" l="FRE"><s0>Laser puits quantique</s0></fC03><fC03 i1="10" i2="3" l="ENG"><s0>Quantum well lasers</s0></fC03><fN21><s1>033</s1></fN21><fN47 i1="01" i2="1"><s0>0404M000090</s0></fN47></pA></standard></inist></record>Pour manipuler ce document sous Unix (Dilib)
EXPLOR_STEP=IndiumV3/Data/Main/Repository
HfdSelect -h $EXPLOR_STEP/biblio.hfd -nk 00A809 | SxmlIndent | more
Ou
HfdSelect -h $EXPLOR_AREA/Data/Main/Repository/biblio.hfd -nk 00A809 | SxmlIndent | more
Pour mettre un lien sur cette page dans le réseau Wicri
{{Explor lien
|wiki= *** parameter Area/wikiCode missing ***
|area= IndiumV3
|flux= Main
|étape= Repository
|type= RBID
|clé= Pascal:04-0055890
|texte= Visible spectrum (645 nm) transverse electric field laser operation of InP quantum dots coupled to tensile strained In0.46Ga0.54P quantum wells
}}
| This area was generated with Dilib version V0.5.77. |  |